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| 2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1384 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications * * * * * * High voltage: VCBO = -300 V, VCEO = -300 V Low saturation voltage: VCE (sat) = -0.5 V (max) Small collector output capacitance: Cob = 6 pF (typ.) Complementary to 2SC3515 Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB PC Collector power dissipation PC (Note 1) Junction temperature Storage temperature range Tj Tstg Rating -300 -300 -8 -100 -20 500 1000 150 -55 to 150 mW Unit V V V mA mA PW-MINI JEDEC JEITA TOSHIBA SC-62 2-5K1A Weight: 0.05 g (typ.) C C Note 1: 2SA1384 mounted on a ceramic substrate (250 mm2 x 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1384 Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) DC current gain (Note 3) hFE (2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE (sat) VBE (sat) fT Cob Test Condition VCB = -300 V, IE = 0 VEB = -8 V, IC = 0 IC = -0.1 mA, IE = 0 IC = -1 mA, IB = 0 VCE = -10 V, IC = -20 mA VCE = -10 V, IC = -1 mA IC = -20 mA, IB = -2 mA IC = -20 mA, IB = -2 mA VCE = -10 V, IC = -20 mA VCB = -20 V, IE = 0, f = 1 MHz Min -300 -300 30 20 50 Typ. 70 6 Max -0.1 -0.1 150 -0.5 -1.0 8 V V MHz pF Unit A A V V Note 3: hFE (1) classification R: 30 to 90, O: 50 to 150 Marking Part No. (or abbreviation code) J Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SA1384 IC - VCE (low voltage region) -100 Common emitter Ta = 25C -10 -5 -3 -2 -1 -0.8 -60 -0.6 -0.4 -0.3 -20 -0.2 IB = -0.1 mA 0 0 0 -2 -4 -6 -8 -10 -12 -14 0 0 -80 -100 Common emitter Ta = 100C -10 -5 -3 -2 -1 -0.5 -40 -0.3 -0.2 -20 IB = -0.1 mA 0 -2 -4 -6 -8 -10 -12 -14 IC - VCE (low voltage region) (mA) Collector current IC Collector current IC (mA) -80 -60 -40 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC - VCE (low voltage region) -100 -10 -80 -5 -3 -2 Common emitter Ta = -55C -10 -100 -90 -8 IC - VCE (Low current region) -80 -70 -60 -50 -6 -40 -4 -30 -20 IB = -10 A 0 0 0 Common emitter Ta = 25C (mA) Collector current IC -60 -1 -40 -0.8 -0.6 -0.5 -0.4 -0.3 -0.2 IB = -0.1 mA -12 -14 -20 Collector current IC (mA) 0 -2 -4 -6 -8 -2 0 0 -10 -40 -80 -120 -160 -200 -240 -280 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC - VCE (low current region) -10 -70 -8 -60 -50 Common emitter Ta = 100C -10 IC - VCE (low current region) Common emitter Ta = -55C (mA) (mA) -40 -8 -100 -90 -80 -4 -70 -60 -50 -2 -40 -30 -20 IB = -10 A -240 -280 Collector current IC -6 Collector current IC -30 -6 -4 -20 -2 IB = -10 A 0 -40 -80 -120 -160 -200 -240 -280 0 0 0 0 0 -40 -80 -120 -160 -200 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 3 2006-11-09 2SA1384 hFE - IC 500 1000 hFE - IC Common emitter 500 VCE = -10 V DC current gain hFE 300 Common emitter DC current gain hFE Ta = 25C 100 50 30 -1 VCE = -10 V 300 Ta = 100C 100 50 30 25 -55 -5 10 -0.1 -0.3 -1 -3 -10 -30 -100 10 -0.1 -0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) VCE (sat) - IC -5 -10 VBE (sat) - IC Base-emitter saturation voltage VBE (sat) (V) Common emitter -5 -3 IC/IB = 10 Collector-emitter saturation voltage VCE (sat) (V) -3 Common emitter IC/IB = 10 -1 -0.5 -0.3 Ta = 100C -0.1 -0.05 -0.03 -0.1 -0.3 -1 25 -55 -3 -10 -30 -100 -1 -0.5 -0.3 Ta = -55C 25 100 -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) fT - IC 500 Transition frequency fT (MHz) Common emitter 300 Ta = 25C Collector input capacitance Cib (pF) Collector output capacitance Cob (pF) Cib, Cob - VR 300 f = 1 MHz 100 50 30 Cib (IC = 0) Ta = 25C 100 50 30 VCE = -20 V -10 -5 10 5 3 Cob (IE = 0) 10 -0.3 -1 -3 -10 -30 1 0.1 0.3 1 3 10 30 100 300 Collector current IC (mA) Reverse voltage VR (V) 4 2006-11-09 2SA1384 PC - Ta 1.2 (1) Mounted on ceramic substrate 2 (250 mm x 0.8 t) (2) No heat sink 0.8 -500 -300 Safe Operating Area IC max (pulse) IC max (continuous) 100 ms* 10 ms* 1 ms* (W) PC 1.0 -100 Collector power dissipation (mA) Collector current IC -50 -30 DC operation Ta = 25C 0.6 0.4 -10 -5 -3 0.2 0 0 -1 *: Single no repetitive pulse Ta = 25C Curves must be derated linearly -0.3 with increase in temperature. Tested without a substrate. VCEO max -0.1 -1 -3 -10 -30 -100 -300 -0.5 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) -1000 Collector-emitter voltage VCE (V) 5 2006-11-09 2SA1384 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-09 |
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